AIKP20N60CTAKSA1
IGBT 晶体管 DISCRETES
Summary of Features:
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- Very low V CEsat 1.5V typ.
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- Maximum junction temperature 175°C
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- Short circuit withstand time 5µs
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- Positive temperature coefficient in V CEsat
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- Low EMI
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- Low gate charge
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- Green package
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- Very soft, fast recovery anti-parallel Emitter Controlled HE diode