AIKP20N60CTAKSA1

IGBT 晶体管 DISCRETES

Summary of Features:

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Very low V CEsat 1.5V typ.

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Maximum junction temperature 175°C

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Short circuit withstand time 5µs

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Positive temperature coefficient in V CEsat

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Low EMI

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Low gate charge

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Green package

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Very soft, fast recovery anti-parallel Emitter Controlled HE diode