TPC8005-H

Silicon N Channel MOS Type High Speed U−MOS

High Speed and High Efficiency DC−DC Converters

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PC Applications

 Small footprint due to small and thin package

 High speed switching  : 60% speed up compare with current type

 Small gate charge  : Qg = 20 nC typ.

 Low drain−source ON resistance  : RDS ON= 13 mΩtyp.

 High forward transfer admittance  : |Yfs| = 16 S typ.

 Low leakage current  : IDSS= 10 µA max VDS= 30 V

 Enhancement−mode : Vth= 1.3~2.5 V VDS= 10 V, ID= 1mA