TPC8120

TOSHIBA  TPC8120  晶体管, MOSFET, P沟道, -18 A, -30 V, 0.0026 ohm, -10 V, -800 mV

The is a -30V Silicon P-channel MOSFET with low drain-source ON resistance. Suitable for use in lithium ion battery and power management switch applications.

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High forward transfer admittance

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Low leakage current

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Enhancement mode

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Small footprint due to small and thin package