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IPD50R3K0CEBTMA1

Infineon CoolMOS™CE/CFD 功率 MOSFET

N-Channel 500V 1.7A Tc 18W Tc Surface Mount PG-TO252-3


得捷:
MOSFET N-CH 500V 1.7A TO252-3


欧时:
### Infineon CoolMOS™CE/CFD 功率 MOSFET


艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The IPD50R3K0CEBTMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 18000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This device utilizes coolmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.


安富利:
Trans MOSFET N-CH 550V 1.7A 3-Pin TO-252 T/R


TME:
Transistor: N-MOSFET; unipolar; 500V; 1.7A; 18W; PG-TO252-3


Verical:
Trans MOSFET N-CH 500V 2.6A 3-Pin2+Tab DPAK T/R


Win Source:
MOSFET N-CH 500V 1.7A PG-TO-252


IPD50R3K0CEBTMA1 PDF数据文档
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