FF650R17IE4D_B2

INFINEON  FF650R17IE4D_B2  晶体管, IGBT阵列&模块, N沟道, 650 A, 2 V, 4.15 kW, 1.7 kV, Module

Summary of Features:

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Extended Operation Temperature Ttvj op

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High DC Stability

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High Current Density

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Low Switching Losses

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Vvj op = 150°C

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Enlarged Diode for regenerative operation

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Low Vcesat

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Package with CTI > 400

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High Creepage and Clearance Distances

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High Power and Thermal Cycling Capability

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Copper Base Plate

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UL recognized

Benefits:

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High Power Density

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Standardized housing