FF650R17IE4D_B2
数据手册.pdfInfineon(英飞凌)
分立器件
INFINEON FF650R17IE4D_B2 晶体管, IGBT阵列&模块, N沟道, 650 A, 2 V, 4.15 kW, 1.7 kV, Module
Summary of Features:
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- Extended Operation Temperature Ttvj op
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- High DC Stability
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- High Current Density
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- Low Switching Losses
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- Vvj op = 150°C
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- Enlarged Diode for regenerative operation
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- Low Vcesat
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- Package with CTI > 400
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- High Creepage and Clearance Distances
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- High Power and Thermal Cycling Capability
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- Copper Base Plate
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- UL recognized
Benefits:
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- High Power Density
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- Standardized housing
