IRFZ44RPBF

VISHAY  IRFZ44RPBF  晶体管, MOSFET, N沟道, 50 A, 60 V, 28 mohm, 10 V, 4 V

The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. This Power device utilize advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit, combined with the ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.

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Advanced process technology

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Ultra-low ON-resistance

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Dynamic dV/dt rating

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-55 to 175°C Operating temperature range

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Fully avalanche rated