FDB86135

FAIRCHILD SEMICONDUCTOR  FDB86135  晶体管, MOSFET, N沟道, 120 A, 100 V, 0.003 ohm, 10 V, 2 V

The is a N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for the ON-state resistance and yet maintains superior switching performance. It is suitable for use in DC-to-DC primary bridge, DC-to-DC synchronous rectification and hot swap application.

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Fast-switching speed

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Low gate charge

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High performance Trench technology for extremely low RDS ON

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High power and current handling capability