JANTX2N3441

NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR

If your circuit"s specifications require a device that can handle high levels of voltage, "s NPN general purpose bipolar junction transistor is for you. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 7 V.