IXGA20N120A3

Trans IGBT Chip N-CH 1200V 40A 180000mW 3Pin2+Tab TO-263AA

Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching

VCES= 1200V

IC110 = 20A

VCEsat ≤2.5V

Features

Optimized for Low Conduction Losses

International Standard Packages

Advantages

High Power Density

Low Gate Drive Requirement

Applications

Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts

Inrush Current Protection Circuits

得捷:
IGBT 1200V 40A 180W TO263

艾睿:
The IXGA20N120A3 IGBT transistor from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 180000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

Verical:
Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin2+Tab TO-263AA

DeviceMart:
IGBT 1200V 40A 180W TO263