IXGA20N120A3
数据手册.pdfTrans IGBT Chip N-CH 1200V 40A 180000mW 3Pin2+Tab TO-263AA
Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching
VCES= 1200V
IC110 = 20A
VCEsat ≤2.5V
Features
Optimized for Low Conduction Losses
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
得捷:
IGBT 1200V 40A 180W TO263
艾睿:
The IXGA20N120A3 IGBT transistor from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 180000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
Verical:
Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin2+Tab TO-263AA
DeviceMart:
IGBT 1200V 40A 180W TO263