MHT1006NT1

RF Power Transistor,728 to 2700MHz, 10W, Typ Gain in dB is 19.8 @ 2400MHz, 28V, LDMOS, SOT1811

Overview

The RF power LDMOS transistor is suitable for industrial heating applications from 728 to 2700 MHz. Device is capable of both CW and pulse operation.

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## Features

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* Universal Broadband Driven Device with Internal RF Feedback

* RoHS Compliant

* In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 7-inch Reel.

## Features RF Performance Table

### 2300 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

2300 MHz| 21.2| 23.6| 9.0| –40.9| –10

2350 MHz| 21.6| 22.6| 8.6| –40.0| –22

2400 MHz| 20.7| 21.0| 8.3| –40.1| –9