MHT1004NR3
RF Power Transistor,2450 to 2450MHz, 280W, Typ Gain in dB is 15.2 @ 2450MHz, 32V, LDMOS, SOT1823
Overview
The MHT1004N and MHT1004GN 300 W CW high efficiency RF power transistors are designed for consumer and commercial cooking applications operating in the 2450 MHz ISM band.
For additional information contact ® Semiconductor.
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## Features
* Characterized with series equivalent large-signal impedance parameters and common source S-parameters
* Internally matched for ease of use
* Qualified for operation at 32 Vdc
* Integrated ESD protection
* 150°C case operating temperature
* 225°C die temperature capability
* RoHS Compliant
**Typical Applications**
* Consumer cooking
* Commercial cooking
## Features RF Performance Tables
### Typical Performance
VDD = 32 Vdc, IDQ = 100 mA- .
- *Frequency
- .
- * | **Signal Type** | **Gps
- .
- * | **PAE
- .
- * | **Pout
- .
- *
\---|---|---|---|---
2450| CW| 15.2| 57.9| 300
### Load Mismatch/Ruggedness
**Frequency
MHz- .
- * | **Signal Type** | **VSWR** | **Pin
- .
- * | **Test
- .
- * | **Result**
\---|---|---|---|---|---
2450| CW| > 5:1
at all Phase Angles| 15.0
2 dB Overdrive| 32| No Device Degradation