IRF9610PBF

VISHAY  IRF9610PBF  晶体管, MOSFET, P沟道, 1.75 A, -200 V, 3 ohm, -10 V, -4 V

The is a -200V P-channel Power MOSFET uses advanced HEXFET technology. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.

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Dynamic dV/dt rating

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Fast switching

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150°C Operating temperature

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Easy to parallel

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Simple drive requirement