IRF9610PBF
数据手册.pdfVISHAY IRF9610PBF 晶体管, MOSFET, P沟道, 1.75 A, -200 V, 3 ohm, -10 V, -4 V
The is a -200V P-channel Power MOSFET uses advanced HEXFET technology. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
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- Dynamic dV/dt rating
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- Fast switching
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- 150°C Operating temperature
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- Easy to parallel
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- Simple drive requirement