DXT2010P5-13

DXT2010 系列 NPN 60 V 6 A 表面贴装 双极性 晶体管 - PowerDI-5

If you require a general purpose BJT that can handle high voltages, then the NPN BJT, developed by Zetex, is for you. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 3200 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V.