SI3433BDV-T1-E3
VISHAY SI3433BDV-T1-E3 晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.034 ohm, -4.5 V, -450 mV
The is a 1.8VGS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
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- -55 to 150°C Operating temperature range
艾睿:
Trans MOSFET P-CH 20V 4.3A 6-Pin TSOP T/R