CSD23381F4T

TEXAS INSTRUMENTS  CSD23381F4T  晶体管, MOSFET, P沟道, -2.3 A, -12 V, 0.15 ohm, -4.5 V, -950 mV

P 通道 FemtoFET™ 功率 MOSFET，Texas Instruments

得捷:
MOSFET P-CH 12V 2.3A 3PICOSTAR

立创商城:
CSD23381F4T

德州仪器TI:
-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 175 mOhm, gate ESD protection

欧时:
Texas Instruments FemtoFET 系列 P沟道 MOSFET 晶体管 CSD23381F4T, 2.3 A, Vds=12 V, 3引脚 PICOSTAR封装

贸泽:
MOSFET 12V,P-Ch FemtoFET MOSFET

e络盟:
TEXAS INSTRUMENTS  CSD23381F4T  晶体管, MOSFET, P沟道, -2.3 A, -12 V, 0.15 ohm, -4.5 V, -950 mV

艾睿:
Create an effective common drain amplifier using this CSD23381F4T power MOSFET from Texas Instruments. Its maximum power dissipation is 500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device is made with femtofet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET P-CH 12V 2.3A 3-Pin PICOSTAR T/R

Verical:
Trans MOSFET P-CH 12V 2.3A 3-Pin PICOSTAR T/R

Win Source:
MOSFET P-CH 12V 2.3A 3PICOSTAR / P-Channel 12 V 2.3A Ta 500mW Ta Surface Mount 3-PICOSTAR