FF900R12IP4BOSA2
晶体管, IGBT阵列&模块, N沟道, 900 A, 1.7 V, 5.1 kW, 1.2 kV, Module
Summary of Features:
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- Extended Operation Temperature Ttvj op
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- High DC Stability
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- High Short Circuit Capability, Self Limiting Short Circuit Current
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- Unbeatable Robustness
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- Vcesat with positive Temperature Coefficient
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- Low Vcesat
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- 4kV AC 1min Insulation
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- Package with CTI > 400
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- High Creepage and Clearance Distances
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- High Power and Thermal Cycling Capability
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- Substrate for Low Thermal Resistance
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- UL recognized
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Benefits:
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- High Power Density
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- Standardized housing