NTGS3443T1G

ON SEMICONDUCTOR  NTGS3443T1G  晶体管, MOSFET, P沟道, 3.1 A, -20 V, 0.058 ohm, -4.5 V, -950 mV

The is a P-channel Power MOSFET offers -20V drain source voltage and -2.2A continuous drain current. It is suitable for power management in portable and battery-powered products, cellular and cordless telephones and PCMCIA cards.

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Ultra-low RDS ON

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Higher efficiency extending battery life

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Miniature surface-mount package

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-55 to 150°C Operating temperature range