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FDB44N25TM

FAIRCHILD SEMICONDUCTOR  FDB44N25TM  晶体管, MOSFET, N沟道, 44 A, 250 V, 0.058 ohm, 10 V, 5 V

The is an UniFET™ N-channel High Voltage MOSFET produced based on Semiconductor"s planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction PFC, flat panel display FPD TV power and ATX.

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100% Avalanche tested
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47nC Typical low gate charge
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60pF Typical low Crss

FDB44N25TM PDF数据文档
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