2SJ652-1E

通用开关设备的应用 General-Purpose Switching Device Applications

2SJ652 is a P-Channel Power MOSFET, -60V, -28A, 38mΩ, TO-220F-3SG for General-purpose Swiching Device Application. It features low on-resistance, ultra-high speed switching and 4.0V drive.

Features

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Low on-resistance 28.5mΩ typ

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Input capacitance Ciss = 4360pF typ

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4.0V drive

得捷:
MOSFET P-CH 60V 28A TO220F-3SG

立创商城:
2SJ652-1E

贸泽:
MOSFET P-Channel Power MOSFET, -60V, -28A, 38m

e络盟:
晶体管, MOSFET, P沟道, -28 A, -60 V, 0.0285 ohm, -10 V, -2.6 V

艾睿:
Create an effective common drain amplifier using this 2SJ652-1E power MOSFET from ON Semiconductor. Its maximum power dissipation is 2000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET P-CH 60V 28A 3-Pin3+Tab TO-220F Magazine

Verical:
Trans MOSFET P-CH 60V 28A 3-Pin3+Tab TO-220F Magazine

Win Source:
MOSFET P-CH 60V 28A TO-220FP-3