2SJ652-1E
数据手册.pdf通用开关设备的应用 General-Purpose Switching Device Applications
2SJ652 is a P-Channel Power MOSFET, -60V, -28A, 38mΩ, TO-220F-3SG for General-purpose Swiching Device Application. It features low on-resistance, ultra-high speed switching and 4.0V drive.
Features
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- Low on-resistance 28.5mΩ typ
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- Input capacitance Ciss = 4360pF typ
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- 4.0V drive
得捷:
MOSFET P-CH 60V 28A TO220F-3SG
立创商城:
2SJ652-1E
贸泽:
MOSFET P-Channel Power MOSFET, -60V, -28A, 38m
e络盟:
晶体管, MOSFET, P沟道, -28 A, -60 V, 0.0285 ohm, -10 V, -2.6 V
艾睿:
Create an effective common drain amplifier using this 2SJ652-1E power MOSFET from ON Semiconductor. Its maximum power dissipation is 2000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET P-CH 60V 28A 3-Pin3+Tab TO-220F Magazine
Verical:
Trans MOSFET P-CH 60V 28A 3-Pin3+Tab TO-220F Magazine
Win Source:
MOSFET P-CH 60V 28A TO-220FP-3