FM22L16-55-TGTR

FM22L16 Series 4Mb 256K x 16 3V 55ns Parallel F-RAM Memory - TSOP-44

FRAM（铁电体 RAM） 存储器 IC 4Mb（256K x 16） 并联 110 ns 44-TSOP II

立创商城:
FM22L16-55-TGTR

得捷:
IC FRAM 4M PARALLEL 44TSOP II

贸泽:
F-RAM 4M 256Kx16 55ns F-RAM

艾睿:
FRAM 4Mbit Parallel Interface 3.3V 44-Pin TSOP-II T/R

安富利:
The FM22L16 is a 256 K × 16 nonvolatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM BBSRAM. Fast write timing and high write endurance make the F-RAM superior to other types of memory.The FM22L16 operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Read and write cycles may be triggered by or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM22L16 ideal for nonvolatile memory applications requiring frequent or rapid writes.The FM22L16 includes a low voltage monitor that blocks access to the memory arr

Chip1Stop:
NVRAM FRAM Parallel 4M-Bit 3.3V 44-Pin TSOP-II T/R

TME:
Memory; FRAM; parallel 16bit; 256kx16bit; 4Mbit; 2.7÷3.6VDC; 55ns