SI4463DY

P沟道2.5V指定的PowerTrench MOSFET P-Channel 2.5V Specified PowerTrench MOSFET

General Description

This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V.

Features

• –11.5 A, –20 V. RDSON = 12 mΩ @ VGS = –4.5 V

                       RDSON = 17.5 mΩ @ VGS = –2.5 V

• Fast switching speed.

• High performance trench technology for extremely low RDSON

• High power and current handling capability

Applications

• Power management

• Load switch

• Battery protection