SI4463CDY-T1-GE3
VISHAY SI4463CDY-T1-GE3 晶体管, MOSFET, P沟道, -18.6 A, -20 V, 0.006 ohm, -10 V, -600 mV
The is a 2.5VGS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for adaptor switch, high current load switch and notebook applications.
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- 100% Rg tested
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- 100% UIS tested
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- Halogen-free
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- -55 to 150°C Operating temperature range
