FQB34N20LTM

FAIRCHILD SEMICONDUCTOR  FQB34N20LTM  晶体管, MOSFET, N沟道, 31 A, 200 V, 75 mohm, 10 V, 2 V

The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.

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Low level gate drive requirement allowing direct operation from logic drivers

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100% Avalanche tested

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55nC Typical low gate charge

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52pF Typical low Crss