STN3NF06

STMICROELECTRONICS  STN3NF06  晶体管, MOSFET, N沟道, 1.5 A, 60 V, 0.07 ohm, 20 V, 3 V

The is a STripFET™ II N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

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Exceptional dV/dt capability

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100% Avalanche tested

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Avalanche rugged technology

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-55 to 150°C Operating junction temperature