IPB80N06S4L07ATMA1

D2PAK N-CH 60V 80A

表面贴装型 N 通道 80A（Tc） 79W（Tc） PG-TO263-3-2

得捷:
MOSFET N-CH 60V 80A TO263-3

艾睿:
Make an effective common gate amplifier using this IPB80N06S4L07ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 79000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.

安富利:
Trans MOSFET N-CH 60V 80A 3-Pin2+Tab TO-263