IPA90R800C3XKSA1

单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3

CoolMOS™C3 功率 MOSFET

得捷:
MOSFET N-CH 900V 6.9A TO220-FP

欧时:
Infineon CoolMOS C3 系列 Si N沟道 MOSFET IPA90R800C3XKSA1, 6.9 A, Vds=900 V, 3引脚 TO-220FP封装

贸泽:
MOSFET LOW POWER_LEGACY

艾睿:
Create an effective common drain amplifier using this IPA90R800C3XKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 33000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

富昌:
Single N-Channel 900 V 0.8 Ohm 42 nC CoolMOS™ Power Mosfet - TO-220-3FP

Chip1Stop:
Trans MOSFET N-CH 900V 6.9A 3-Pin3+Tab TO-220FP Tube

TME:
Transistor: N-MOSFET; unipolar; 900V; 4.4A; 33W; TO220FP

Verical:
Trans MOSFET N-CH 900V 6.9A 3-Pin3+Tab TO-220FP Tube