IXXK100N60B3H1

Trans IGBT Chip N-CH 600V 200A 695000mW Automotive 3Pin TO-264

This fast-switching IGBT transistor from Ixys Corporation will be perfect in your circuit. Its maximum power dissipation is 695000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

得捷:
IGBT 600V 200A 695W TO264

贸泽:
IGBT Transistors XPT IGBT B3-Class 600V/190Amp CoPacked

艾睿:
Trans IGBT Chip N-CH 600V 200A Automotive 3-Pin TO-264

DeviceMart:
IGBT 600V 190A 695W TO264

IXXK100N60B3H1详细参数

IXXK100N60B3H1 PDF数据文档

图片	型号	厂商	下载
	IXXK100N60B3H1	IXYS Semiconductor
	IXXK200N60C3	IXYS Semiconductor
	IXXK200N65B4	IXYS Semiconductor
	IXXK300N60C3	IXYS Semiconductor
	IXXK110N65B4H1	IXYS Semiconductor
	IXXK100N60C3H1	IXYS Semiconductor
	IXXK160N65B4	IXYS Semiconductor
	IXXK300N60B3	IXYS Semiconductor
	IXXK200N60B3	IXYS Semiconductor
	IXXK160N65C4	IXYS Semiconductor