CSD19534Q5AT

TEXAS INSTRUMENTS  CSD19534Q5AT  晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0126 ohm, 10 V, 2.8 V

The is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in primary side telecom applications.

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Ultra-low Qg and Qgd

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Low thermal resistance

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Avalanche rated

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Halogen-free

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Plastic package

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-55 to 150°C Operating junction temperature range