CSD19534Q5AT
TI(德州仪器)
分立器件
TEXAS INSTRUMENTS CSD19534Q5AT 晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0126 ohm, 10 V, 2.8 V
The is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in primary side telecom applications.
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- Ultra-low Qg and Qgd
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- Low thermal resistance
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- Avalanche rated
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- Halogen-free
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- Plastic package
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- -55 to 150°C Operating junction temperature range
