FQA8N80C

800V N沟道MOSFET 800V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features

• 8.4A, 800V, RDSon= 1.55Ω@VGS= 10 V

• Low gate charge typical 35 nC

• Low Crss typical 13 pF

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability