IRF510A
先进的功率MOSFET Advanced Power MOSFET
FEATURES
• Avalanche Rugged Technology
• Rugged Gate Oxide Technology
• Lower Input Capacitance
• Improved Gate Charge
• Extended Safe Operating Area
• 175°C Operating Temperature
• Lower Leakage Current : 10 μA Max. @ VDS= 100V
• Lower RDSON : 0.289 ΩTyp.
贸泽:
MOSFET 100V .2 OHM 33W
艾睿:
Trans MOSFET N-CH 100V 5.6A 3-Pin3+Tab TO-220AB Rail
Win Source:
Advanced Power MOSFET