2SC2712GT1G

中频NPN晶体管放大器50 V 200毫安， 80兆赫 Medium Frequency NPN Amplifier Transistor 50 V, 200 mA, 80 MHz

The is designed for low to medium frequency applications such as wireless toys. The targeted design enables improved performance versus the industry standard MMBT3904

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in some key parametric specifications.

**Features**

• Lower VCEsat

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• Higher Gain hfe

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• Higher Breakdown Voltage Rating

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• Moisture Sensitivity Level: 1

• This is a Pb−Free Device

 

**Benefits**

• Longer Battery Life

• Improved Performance Through Targeted Design