SI4465ADY-T1-E3
VISHAY SI4465ADY-T1-E3 晶体管, MOSFET, P沟道, 13.7 A, -8 V, 0.0075 ohm, -4.5 V, -0.45 V
The is a 1.8VGS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
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- 100% Rg tested
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- -55 to 150°C Operating temperature range
贸泽:
MOSFET 8.0V 13.7A 3.0W 9.0mohm @ 4.5V
艾睿:
Trans MOSFET P-CH 8V 20A 8-Pin SOIC N T/R
安富利:
Trans MOSFET P-CH 8V 20A 8-Pin SOIC N T/R
富昌:
单通道 P 沟道 8 V 0.009 Ohm 表面贴装 功率 Mosfet - SOIC-8
Verical:
Trans MOSFET P-CH 8V 20A 8-Pin SOIC N T/R
Newark:
# VISHAY SI4465ADY-T1-E3 MOSFET Transistor, P Channel, -13.7 A, -8 V, 0.0075 ohm, 8 V, -0.45 V
