IPP50R350CPXKSA1

Infineon CoolMOS CP 系列 Si N沟道 MOSFET IPP50R350CPXKSA1, 10 A, Vds=550 V, 3引脚 TO-220封装

CoolMOS™CP 功率 MOSFET

得捷:
MOSFET N-CH 550V 10A TO220-3

欧时:
Infineon CoolMOS CP 系列 Si N沟道 MOSFET IPP50R350CPXKSA1, 10 A, Vds=550 V, 3引脚 TO-220封装

贸泽:
MOSFET N-Ch 500V 10A TO220-3

艾睿:
Make an effective common gate amplifier using this IPP50R350CPXKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 89000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode.

Chip1Stop:
Trans MOSFET N-CH 500V 10A 3-Pin3+Tab TO-220AB Tube

TME:
Transistor: N-MOSFET; unipolar; 500V; 10A; 89W; PG-TO220-3

Verical:
Trans MOSFET N-CH 500V 10A 3-Pin3+Tab TO-220AB Tube

Win Source:
MOSFET N-CH 550V 10A TO220-3