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BC856BLT3G

PNP 晶体管,ON Semiconductor这些 ON Semiconductor 双极晶体管可放大模拟或数字信号。 它们还可切换直流或用作振荡器。 ### 标准Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.### 双极性晶体管,On SemiconductorON Semiconductor 的各种双极晶体管,包括以下类别:小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声,双匹配和复杂的双极晶体管

小信号 PNP ,

### 标准

带 S 或 NSV 前缀的制造商部件号具有汽车资格,符合 AEC-Q101 标准。


得捷:
TRANS PNP 65V 0.1A SOT23-3


立创商城:
BC856BLT3G


欧时:
ON Semiconductor BC856BLT3G , PNP 晶体管, 100 mA, Vce=65 V, HFE:220, 100 MHz, 3引脚 SOT-23封装


艾睿:
This specially engineered PNP BC856BLT3G GP BJT from ON Semiconductor comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.


Allied Electronics:
ON Semi BC856BLT3G PNP Bipolar Transistor; 0.1 A; 65 V; 3-Pin SOT-23


安富利:
Trans GP BJT PNP 65V 0.1A 3-Pin SOT-23 T/R


富昌:
BC856 Series 65 V 100 mA 225 mW Surface Mount PNP Transistor - SOT-23


Chip1Stop:
Trans GP BJT PNP 65V 0.1A 300mW Automotive 3-Pin SOT-23 T/R


Verical:
Trans GP BJT PNP 65V 0.1A Automotive 3-Pin SOT-23 T/R


Newark:
# ON SEMICONDUCTOR  BC856BLT3G  Bipolar BJT Single Transistor, PNP, 65 V, 100 MHz, 225 mW, -100 mA, 290 hFE


DeviceMart:
TRANS PNP GP 65V 100MA SOT-23


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