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BGA751N7E6327XTSA1

射频放大器 RF SILICON MMIC

Description:

The BGA751L7 is a low current single-band low noise amplifier MMIC for UMTS bands V, VI and VIII. The LNA is based upon ’s proprietary and cost-effective SiGe:C technology and comes in a low profileTSNP-7-1 or TSNP-7-2 leadless green packages. Because the matching is off chip, the 800 MHz path can be easily converted into a 900 MHz path by optimizing the input and output matching network. This document specifies the electrical parameters, pinout, application circuit and packaging of the chip.

Summary of Features:

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Gain: 16 / -8 dB in high / low gain mode
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Noise figure: 1.05 dB in high gain mode
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Supply current: 3.3 / 0.5 mA in high / low gain mode
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Standby mode < 2 μA typ.
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Output internally matched to 50 Ω
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Inputs pre-matched to 50 Ω
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2kV HBM ESD protection
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Low external component count
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Small leadless TSNP-7-1 / TSNP-7-2 packages 2.0 x 1.3 x 0.39 mm
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Pb-free RoHS compliant package

BGA751N7E6327XTSA1 PDF数据文档
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