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BGA751N7E6327XTSA1

BGA751N7E6327XTSA1

数据手册.pdf
Infineon(英飞凌) 主动器件

射频放大器 RF SILICON MMIC

Description:

The BGA751L7 is a low current single-band low noise amplifier MMIC for UMTS bands V, VI and VIII. The LNA is based upon ’s proprietary and cost-effective SiGe:C technology and comes in a low profileTSNP-7-1 or TSNP-7-2 leadless green packages. Because the matching is off chip, the 800 MHz path can be easily converted into a 900 MHz path by optimizing the input and output matching network. This document specifies the electrical parameters, pinout, application circuit and packaging of the chip.

Summary of Features:

.
Gain: 16 / -8 dB in high / low gain mode
.
Noise figure: 1.05 dB in high gain mode
.
Supply current: 3.3 / 0.5 mA in high / low gain mode
.
Standby mode < 2 μA typ.
.
Output internally matched to 50 Ω
.
Inputs pre-matched to 50 Ω
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2kV HBM ESD protection
.
Low external component count
.
Small leadless TSNP-7-1 / TSNP-7-2 packages 2.0 x 1.3 x 0.39 mm
.
Pb-free RoHS compliant package
BGA751N7E6327XTSA1中文资料参数规格
技术参数

频率 850 MHz

供电电流 3.3 mA

增益 15.3 dB

测试频率 850 MHz

工作温度Max 85 ℃

工作温度Min -30 ℃

电源电压 2.6V ~ 3V

封装参数

引脚数 6

封装 TSNP-7-1

外形尺寸

封装 TSNP-7-1

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 LNA for LTE and 3G systems

符合标准

RoHS标准 RoHS Compliant

含铅标准 无铅

BGA751N7E6327XTSA1引脚图与封装图
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