BGA751N7E6327XTSA1
数据手册.pdfInfineon(英飞凌)
主动器件
射频放大器 RF SILICON MMIC
Description:
The BGA751L7 is a low current single-band low noise amplifier MMIC for UMTS bands V, VI and VIII. The LNA is based upon ’s proprietary and cost-effective SiGe:C technology and comes in a low profileTSNP-7-1 or TSNP-7-2 leadless green packages. Because the matching is off chip, the 800 MHz path can be easily converted into a 900 MHz path by optimizing the input and output matching network. This document specifies the electrical parameters, pinout, application circuit and packaging of the chip.
Summary of Features:
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- Gain: 16 / -8 dB in high / low gain mode
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- Noise figure: 1.05 dB in high gain mode
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- Supply current: 3.3 / 0.5 mA in high / low gain mode
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- Standby mode < 2 μA typ.
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- Output internally matched to 50 Ω
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- Inputs pre-matched to 50 Ω
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- 2kV HBM ESD protection
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- Low external component count
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- Small leadless TSNP-7-1 / TSNP-7-2 packages 2.0 x 1.3 x 0.39 mm
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- Pb-free RoHS compliant package