BUZ905
SEMELAB BUZ905 晶体管, MOSFET, P沟道, 8 A, -160 V, 1.5 ohm, -1.5 V
The is a P-channel enhancement mode Power MOSFETs features high speed switching, high energy rating and integral protection diode.
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- 1.0°C/W Junction-to-case thermal resistance
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- 120ns Turn-on time
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- 60ns Turn-off time
e络盟:
功率场效应管, MOSFET, P沟道, 160 V, 8 A, 1.5 ohm, TO-3, 通孔
Newark:
MOSFET Transistor, P Channel, 8 A, -160 V, 1.5 ohm, -1.5 V