BUZ901

SEMELAB  BUZ901  晶体管, MOSFET, N沟道, 8 A, 200 V, 1.5 ohm, 1.5 V

The is a 200V N-channel Power MOSFET for audio applications. It features integral protection diode and enhancement mode.

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High speed switching

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Semefab designed and diffused

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High voltage

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High energy rating

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±14V Gate to source voltage

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8A Body drain diode current

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1°C/W Thermal resistance, junction to case