STD11NM65N
N沟道650 V， 0.425 I©典型值，11是MDmeshâ ?? ¢ II功率MOSFET采用DPAK ， TO- 220FP ， I²PAKFP和TO- 220封装 N-channel 650 V, 0.425 Ω typ., 11 A MDmeshâ¢II Power MOSFET in DPAK, TO-220FP, I²PAKFP and TO-220 packages
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
• 100% avalanche tested
• Low input capacitance and gate charge
• low gate input resistance
Applications
• Switching applications
