BFP650F

NPN硅锗RF晶体管 NPN Silicon Germanium RF Transistor

Summary of Features:

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For medium power amplifiers and driver stages

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High OIP3 and P-1dB

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Ideal for low phase noise oscilators

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Maxim. available Gain Gma = 21.5 dB at 1.8 GHz

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Noise figure F = 0.8 dB at 1.8 GHz

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70 GHz fT- Silicon Germanium technology

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Pb-free RoHS compliant package

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Qualification report according to AEC-Q101 available