IKW30N60TAFKSA1

Infineon IKW30N60TAFKSA1 N沟道 IGBT, Vce=600 V, 60 A, 1MHz, 3引脚 TO-247封装

TrenchStop IGBT ，600 和 650V

一系列 Infineon IGBT 晶体管，集电极-发射器电压额定值为 600 和 650V，采用 TrenchStop™ 技术。该系列包括带有集成高速、快速恢复反并联二极管的设备。

• 集电极-发射器电压范围为 600 至 650V

• 极低的 VCEsat

• 低断开损耗

• 短尾线电流

• 低 EMI

• 最大接点温度为 175°C

得捷:
IGBT TRENCH/FS 600V 60A TO247-3

欧时:
Infineon IKW30N60TAFKSA1 N沟道 IGBT, Vce=600 V, 60 A, 1MHz, 3引脚 TO-247封装

艾睿:
This fast-switching IKW30N60TAFKSA1 IGBT transistor from Infineon Technologies will be perfect in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 187000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -40 °C to 175 °C. This device utilizes field stop|trench technology.

安富利:
Trans IGBT Chip N-CH 600V 60A 3-Pin TO-247 Tube

Chip1Stop:
Trans IGBT Chip N-CH 600V 60A 187000mW Automotive 3-Pin3+Tab TO-247 Tube

Verical:
Trans IGBT Chip N-CH 600V 60A 187000mW Automotive 3-Pin3+Tab TO-247 Tube

Win Source:
IGBT TRENCH/FS 600V 60A TO247-3 / IGBT Trench Field Stop 600 V 60 A 187 W Through Hole PG-TO247-3-21