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IKW30N65H5XKSA1

单晶体管, IGBT, 55 A, 1.65 V, 188 W, 650 V, TO-247, 3 引脚

Summary of Features:

.
650V breakthrough voltage
.
Compared to ’s best-in-class HighSpeed 3 family
.
Factor 2.5 lower Q g
.
Factor 2 reduction in switching losses
.
200mV reduction in V CEsat
.
Co-packed with Infineon’s new Rapid Si-diode technology
.
Low C OES/E OSS
.
Mild positive temperature coefficient V CEsat
.
Temperature stability of V f

Benefits:

.
Best-in-class efficiency, resulting in lower junction and

case temperature leading to higher device reliability

.
50V increase in the bus voltage possible without compromising

reliability

.
Higher power density design

Target Applications:

  

.
Uninterruptible Power Supplies
.
Welding

IKW30N65H5XKSA1 PDF数据文档
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