IKW30N65H5XKSA1
单晶体管, IGBT, 55 A, 1.65 V, 188 W, 650 V, TO-247, 3 引脚
Summary of Features:
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- 650V breakthrough voltage
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- Compared to ’s best-in-class HighSpeed 3 family
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- Factor 2.5 lower Q g
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- Factor 2 reduction in switching losses
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- 200mV reduction in V CEsat
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- Co-packed with Infineon’s new Rapid Si-diode technology
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- Low C OES/E OSS
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- Mild positive temperature coefficient V CEsat
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- Temperature stability of V f
Benefits:
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- Best-in-class efficiency, resulting in lower junction and
case temperature leading to higher device reliability
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- 50V increase in the bus voltage possible without compromising
reliability
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- Higher power density design
Target Applications:
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- Uninterruptible Power Supplies
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- Welding