TK31E60W,S1VXS
MOSFET DTMOS IV 系列,Toshiba### MOSFET 晶体管,Toshiba
MOSFET N 通道,TK3x 系列,
### MOSFET ,Toshiba
欧时:
Toshiba DTMOSIV 系列 Si N沟道 MOSFET TK31E60W,S1VXS, 31 A, Vds=600 V, 3引脚 TO-220封装
艾睿:
This TK31E60W,S1VXS power MOSFET from Toshiba can be used for amplification in your circuit. Its maximum power dissipation is 230000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with dtmosiv technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 600V 30.8A 3-Pin TO-220
Verical:
Trans MOSFET N-CH Si 600V 30.8A 3-Pin3+Tab TO-220
儒卓力:
**N-CH 600V 30,8A 88mOhm TO220-3 **