IRFM210B

200V N沟道MOSFET 200V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Features

• 0.77A, 200V, RDSon = 1.5Ω @VGS = 10 V

• Low gate charge typical 7.2 nC

• Low Crss typical 6.8 pF

• Fast switching

• Improved dv/dt capability